? by semikron b 7 C 61 0796 skiippack ? sk integrated intelligent power pack halfbridge skiip 792 gb 170 + driver 370 wt/ft 7) preliminary data case s3 features low thermal impedance optimal thermal management with integrated heatsink pressure contact technology with increased power cycling capability, compact design low stray inductance high power, small losses overtemp. protection short circuit protection isolated power supply 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast) 3) without driver 4) driver input to dc link/ac output or dc link/ac output to heatsink 6) other heatsink on request 7) w - driver wire input f - fiber optic input t - temperature protection 8) ac connection busbars must be connected by user, copper bus- bars available on request 9) with sk-dc link (low inductance) 10) 24 v supply voltage selective 11) chip voltage drop 12) thermal reference for r thjh ; r thha skiip 792 gb 170 - 370 wt/ft absolute maximum ratings symbol conditions 1) values units igbt & inverse diode v ces 1700 v v cc 9) operating dc link voltage 1200 v i c t heatsink = 25 c750a i cm t heatsink = 25 c; t p < 1 ms 1500 a t j 3) igbt & diode C 55 . . .+ 150 c v isol 4) ac, 1 min. 4000 v i f t heatsink = 25 c620a i fm t heatsink = 25 c; t p < 1 ms 1500 a i fsm t p = 10 ms; sin.; t j = 150 c 6480 a i 2 t (diode) t p = 10 ms; t j = 150 c 210 ka 2 s driver v s1 stabilized power supply 18 v v s2 10) nonstabilized power supply 30 v dv/dt primary to second. side 75 kv/ m s t op , t stg operating / stor. temperature C 25(0) . . .+ 85(70) c (version ft) characteristics symbol conditions 1) min. typ. max. units v (br)ces driver without power supply 3 v ces CCv i ces v ge = 0 t j = 25 cC1,2Cma v ce = v ces t j = 125 cC45Cma v cesat 11) i c = 562 a t j = 25 (125) c C 3,3 (4,6) C v v cesat 11) i c = 750 a t j = 25 (125) c C 3,75 (5,65) C v i cetrip t j = 125 c; v s = 15 v 0,6v 3 940 C C a c chc per skiippack ac side C 2,4 C nf l ce top (bottom) C 5 C nh t d(on) v cc = 1200 v C 200 C ns t d(on)driver i c = 750 a 1,2 C m s t r t j = 125 cC300Cns t d(off) inductive load C 2 C m s t d(off)driver C1,2C m s t f C120Cns e on + e off C975Cmj inverse diode 2) v f 11) =v ec i f = 675 a t j = 25 (125) c C 2,3 (2,1) C v i f = 900 a t j = 25 (125) c C 2,6 (2,5) C v v to t j = 125 c C 0,9 C v r t t j = 125 c C 1,8 C m w e on + e off i f = 750 a;t j =125 c C 90 C mj thermal characteristics r thjh per igbt C 0,027 C k/w r thjh per diode C 0,09 C k/w t tp 12) over temperature protection 109 115 121 c r thha 6) p16/280 f; v air = 285 m 3 / h C 0,036 C k/w mechanical data mdc for dc terminals, si units 4 C 6 nm mac for ac terminals, si units 8 C 10 nm case s3 y t y t ? y t ? ? ? ? y ? ? ? t
? by semikron b 7 ? 62 0796 skiippack ? sk integrated intelligent power pack halfbridge skiip 792 gb 170 + driver 370 wt/ft 3) preliminary data features cmos compatible inputs short circuit protection by v ce monitoring and soft switch off drive interlock top/bottom isolation by transformers supply undervoltage protection overtemperature protection fiber-optic connection (option) 1) 24 v - supply voltage selective 2) open collector output, external pull-up resistor necessary 3) w - driver wire input f - fiber optic input t - temperature protection skiip 792 gb 170 - 370 wt/ft driver for halfbridge absolute maximum ratings symbol conditions values units remark v s1 supply voltage primary 18 v pin 8 / 9 v s2 1) supply voltage primary 30 v pin 6 / 7 i outmax output peak current max. 10 a i outav output average current 100 ma f swmax switching frequency max. 11 khz v ce collector emitter voltage sense across igbt 1700 v dv/dt rate of rise and fall of voltage 75 kv/ m s (secondary to primary side) v isol io isol. test volt. in/out (rms; 1 min) 4 kv~ v isol 12 isol. test volt. output 1 - 1,7 kv= output 2 t op , t stg operating / stor. temperature ?25...+85 c wt-version t op , t stg operating / stor. temperature 0...+70 c ft-version characteristics symbol conditions values units remark v s1 supply voltage 15,0 4% v pin 8 / 9 v s2 1) supply voltage 24,0 v pin 6 / 7 +20%/-15% v uvs supply voltage monitoring 13 / 19,5 v 15 v / 24 v i s01 sup. current pr.side (standby) 200 ma 15 v supply i s02 1) sup. current pr.side (standby) 160 ma 24 v supply i s1 sup. current pr.side (max) 680 ma 15 v supply i s2 1) sup. current pr.side (max) 530 ma 24 v supply v it+ input thresh. volt. (high) min 12,9 v v it- input thresh. volt. (low) max. 2,1 v v ge(on) turn-on output gate voltage 15 v v ge(off) turn-off output gate voltage ? 8 v t d(on) propagation delay time on 1,2 m styp. t d(off) propagation delay time off 1,2 m styp. t td dead time of interlock 3 m styp. v cestat v ce -thresh. st. monitoring 6,5 v typ. v ol 2) logic low output voltage < 500 mv 15 ma v oh 2) logic high output voltage max. 30 v t pdon-error propag. delay time-on error 6 m styp. t p reset min. pulse width error 5 m s memory reset t err max. temperature 115 6c i aomax max. output current 5 ma pin 12
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